Diodes DMN3900UFA - Manual (Page 4)

DMN3900UFA
Document number: DS35736 Rev. 4 - 2
4 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN3900UFA
0.2
0.4
0.6
0.8
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)

V = 4.5V
I = 500mA
GS
D
V = V
I = 200mA
GS
D
2.5
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 15V
I = A
DS
D
200m
0.001
0.01
0.1
1
10
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = 25°C
J(max)
A
Single Pulse