Diodes DMN3900UFA - Manual (Page 2)

DMN3900UFA
Document number: DS35736 Rev. 4 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN3900UFA
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30
V
Gate-Source Voltage V
GSS
±8
Continuous Drain Current V
GS
= 4.5V
(Note 6)
I
D
0.65
A
T
A
= +70°C (Note 6) 0.52
(Note 5) I
D
0.55
Pulsed Drain Current (Note 7) I
DM
2.5
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
490
mW
(Note 5) 390
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
255
°C/W
(Note 5) 327
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — 3 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.45 — 0.95 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(on)
—
400 760
mΩ
V
GS
= 4.5V, I
D
= 200mA
480 930 V
GS
= 2.5V, I
D
= 100mA
617 1500 V
GS
= 1.8V, I
D
= 75mA
Forward Transfer Admittance |Y
fs
| 40 — — mS V
DS
= 3V, I
D
= 10mA
Diode Forward Voltage (Note 8) V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 42.2 — pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 4.5 — pF
Reverse Transfer Capacitance C
rss
— 3,4 — pF
Gate Resistance R
g
— 468 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
— 0.7 — nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 200mA
Gate-Source Charge Q
gs
— 0.11 — nC
Gate-Drain Charge Q
gd
— 0.15 — nC
Turn-On Delay Time t
D(on)
— 10.5 — ns
V
DS
= 10V, I
D
= 200mA
V
GS
= 4.5V, R
G
= 6Ω
Turn-On Rise Time t
r
— 7.8 — ns
Turn-Off Delay Time t
D(off)
— 80.6 — ns
Turn-Off Fall Time t
f
— 23.4 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 PCB, with minimum recommended pad layout, except the device measured at t
 10 sec.
7. Device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing