Diodes DMN3900UFA User Manual
Dmn3900ufa, Product summary, Description

DMN3900UFA
Document number: DS35736 Rev. 4 - 2
1 of 6
August 2013
© Diodes Incorporated
DMN3900UFA
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
30V
760m
@ V
GS
= 4.5V
0.65A
930m
@ V
GS
= 2.5V
0.58A
1500mΩ @ V
GS
= 1.8V
0.45A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load
switch
Portable
applications
Power Management Functions
Features
0.4mm ultra low profile package for thin application
0.48mm
2
package footprint, 16 times smaller than SOT23
Low
V
GS(th),
can be driven directly from a battery
Low
R
DS(on)
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.00043 grams (approximate)
Ordering Information
(Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN3900UFA-7B NU
7
8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Equivalent Circuit
Bottom View
Top View
Package Pin Configuration
D
S
G
ESD PROTECTED
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
NU = Product Type Marking Code
DMN3900UFA-7B
Top View
Bar Denotes Gate
and Source Side
NU
X2-DFN0806-3