Dmn3110s new prod uc t, Dmn3110s – Diodes DMN3110S User Manual
Page 3
DMN3110S
Document number: DS31561 Rev. 3 - 2
3 of 6
October 2013
© Diodes Incorporated
DMN3110S
NEW PROD
UC
T
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.0
2.0
4.0
6.0
8.0
10.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
=10V
GS
V
=4.5V
GS
V
=4.0V
GS
V
=3.5V
GS
V
=3.0V
GS
V
=2.5V
GS
V , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
2
4
6
8
10
0
1
2
3
4
5
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V
= 5.0V
DS
I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AI
N-
S
O
U
R
CE
O
N-
R
ESI
ST
ANCE(
)
DS
(O
N)
0.01
0.1
1
0
4
8
12
16
20
I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
0
0.04
0.08
0.12
0.16
0
2
4
6
8
10
V
= 4.5V
GS
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
-50
-25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
R
, DRAI
N
-S
OURCE
ON-
R
ESI
S
TA
NCE
(N
or
m
al
ize
d)
DS
(O
N
)
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N
)
0
0.02
0.04
0.06
0.08
0.1
V
=10V
I =10A
GS
D
V
=4.5V
I =5A
GS
D