Diodes DMN3110S - Manual (Page 2)

DMN3110S
Document number: DS31561 Rev. 3 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3110S
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.5
2.0
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.3
2.7
A
Continuous Drain Current (Note 6) V
GS
= 10V t≦10sec
T
A
= +25°C
T
A
= +70°C
I
D
3.8
3.1
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.7
2.1
A
Pulsed Drain Current (Note 7) I
DM
25 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.74 W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
173.4 °C/W
Total Power Dissipation (Note 6) P
D
1.3 W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
99.1 °C/W
Total Power Dissipation (Note 6) t≦10sec P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 6) t≦10sec R
JA
72 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - 1.0 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 - 3.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
- 54 73
mΩ
V
GS
= 10V, I
D
= 3.1A
- 88 110 V
GS
= 4.5V, I
D
= 2A
Forward Transfer Admittance |Y
fs
| - 4.8 - mS V
DS
= 10V, I
D
= 3.1A
Diode Forward Voltage (Note 6) V
SD
- 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 305.8 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 39.9 - pF
Reverse Transfer Capacitance C
rss
- 39.5 - pF
Gate Resistance R
g
- 1.4 - Ω V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 4.1 - nC
V
GS
= 10V, V
DS
= 10V,
I
D
= 3A
Total Gate Charge (V
GS
= 10V) Q
g
- 8.6 - nC
Gate-Source Charge Q
gs
- 1.2 - nC
Gate-Drain Charge Q
gd
- 1.5 - nC
Turn-On Delay Time t
D(on)
- 2.6 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 47Ω, R
G
= 3Ω,
Turn-On Rise Time t
r
- 4.6 - ns
Turn-Off Delay Time t
D(off)
- 13.1 - ns
Turn-Off Fall Time t
f
- 2.5 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.