Diodes DMN3070SSN - Manual (Page 4)

DMN3070SSN
Document number: DS36169 Rev. 2 - 2
4 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3070SSN
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
TE TH
RESHO
L
D VOL
TAG
E
(
V
)
GS
(t
h
)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (
V
)
S
T = 25°C
A
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
I,
D
R
AI
N L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
iss
f = 1MHz
C
oss
C
rss
0 2 4 6 8 10 12 14 16
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 15V, I = A
DS D
9