Diodes DMN3070SSN - Manual (Page 2)

DMN3070SSN
Document number: DS36169 Rev. 2 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3070SSN
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.2
3.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
5.1
4
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.7
2.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.3
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
60 A
Maximum Body Diode Forward Current (Note 6) I
S
2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.78
W
T
A
= +70°C 0.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ JA
160 °C/W
t<10s 115 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ JA
96 °C/W
t<10s 68 °C/W
Thermal Resistance, Junction to Case (Note 6) R
θ JC
18 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
=24V, V
GS
= 0V
Gate-Body Leakage I
GSS
— — ±10 µA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.1 — 2.1 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
— 24 40
mΩ
V
GS
= 10V, I
D
= 4.2A
— 30 50 V
GS
= 4.5V, I
D
= 2A
Forward Transfer Admittance IY
fs
I — 2.7 — S V
DS
= 5V, I
D
=4.2A
Diode Forward Voltage V
SD
— 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 697 — pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 97 — pF
Reverse Transfer Capacitance C
rss
— 67 — pF
Gate Resistance R
g
— 1.47 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 6 —
nC V
DS
= 15V, I
D
= 9A
Total Gate Charge (V
GS
= 10V) Q
g
— 13.2 —
Gate-Source Charge Q
gs
— 2.2 —
Gate-Drain Charge Q
gd
— 1.8 —
Turn-On Delay Time t
D(ON)
— 4.3 — ns
V
DD
=15V,V
GEN
=10V,R
GEN
= 6Ω,
R
L
=15Ω
Turn-Off Delay Time t
D(OFF)
— 4.4 — ns
Turn-On Rise Time t
r
— 20.1 — ns
Turn-Off Fall Time t
f
— 4.1 — ns
Reverse Recovery Time t
rr
— 7.3 — Ns I F = 9A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
— 7.9 — nC I F = 9A, di/dt = 500A/μs
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P
D
is based on t<10s R
θJA
.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P
D
is based on t<10s R
θJA
.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.