Dmn3030lfg new prod uc t, Dmn3030lfg – Diodes DMN3030LFG User Manual
Page 4
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
4 of 6
March 2013
© Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
5
10
15
20
25
30
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
T = 25°C
A
10
100
1,000
10,000
0
5
10
15
20
25
30
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10 12
14
16 18 20
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
,
V
= 15V
I = A
DS
D
6
0
50
100
150
200
250
300
350
400
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1
1
10
100 1,000
1E-04
1E-05
P
, P
E
AK
T
R
A
N
SI
E
N
T
P
O
IW
E
R
(W
)
(P
K
)
Single Pulse
R
= 148 C/W
R
= r * R
T - T = P * R
JA
JA(t)
(t)
JA
J
A
JA(t)
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ