Diodes DMN3030LFG - Manual (Page 2)

DMN3030LFG
Document number: DS35499 Rev. 5 - 2
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.3
4.2
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6.8
5.2
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.6
6.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11
8.8
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
70 A
Maximum Body Diode continuous Current I
S
3 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.9
W
T
A
= +70°C 0.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
148
°C/W
t<10s 89
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.3
W
T
A
= +70°C 1.4
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
56
°C/W t<10s 34
Thermal Resistance, Junction to Case (Note 6) R
JC
6.9
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 100 nA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 µA V
GS
= ±25V, V
DS
= 0V
— — 100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 1.2 2.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 10 18
mΩ
V
GS
= 10V, I
D
= 10A
— 16 27 V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance |Y
fs
| — 6 — S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V
SD
— 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 751 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 121 —
Reverse Transfer Capacitance C
rss
— 110 —
Gate Resistance R
g
— 1.5 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
— 9 —
nC
V
GS
= 4.5V, V
DS
= 15V, I
D
=6A
Total Gate Charge V
GS
= 10V Q
g
— 17.4 —
V
GS
= 10V, V
DS
= 15V,
I
D
= 6A
Gate-Source Charge Q
gs
— 2.2 —
Gate-Drain Charge Q
gd
— 3 —
Turn-On Delay Time t
D(on)
— 2.5 —
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 6Ω, R
L
= 1.8Ω, I
D
= 6.7A
Turn-On Rise Time t
r
— 6.6 —
Turn-Off Delay Time t
D(off)
— 19.0 —
Turn-Off Fall Time t
f
— 6.3 —
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.