Diodes DMN3016LFDE - Manual (Page 4)

DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN3016LFDE
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E(
V)
GS
(T
H
)
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
C
iss
f = 1MHz
0 5 10 15 20 25 30
Q , TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
f = 1MHz
0
1
2
3
4
5
6
7
8
9
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
10
20
30
40
50
60
70
80
90
100
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000 0.0001
P
,
P
EAK
T
R
AN
SI
EN
T
P
O
IW
E
R
(W
)
(P
K
)
Single Pulse
R
= 61 C/W
R = r * R
T - T = P * R




JA
JA(t)
(t) JA
J A JA(t)
