Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3016LFDE User Manual
Page 2
DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
2 of 6
September 2013
© Diodes Incorporated
DMN3016LFDE
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10
8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
12
9
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
2.5 A
Pulsed Drain Current (10
s pulse, duty cycle = 1%)
I
DM
90 A
Avalanche Current (Note 7) L = 0.1mH
I
AR
22 A
Repetitive Avalanche Energy (Note 7) L = 0.1mH
E
AR
24 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.73
W
T
A
= +70°C
0.47
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
171
°C/W
t<10s 121
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.02
W
T
A
= +70°C
1.30
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
62
°C/W
t<10s 42
Thermal Resistance, Junction to Case (Note 6)
Steady state
R
JC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
- - 1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.4 - 2.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
- 8 12
mΩ
V
GS
= 10V, I
D
= 11A
- 12 16
V
GS
= 4.5V, I
D
= 9A
Forward Transfer Admittance
|Y
fs
|
- 32 - S
V
DS
= 5V, I
D
= 12A
Diode Forward Voltage
V
SD
- 0.70 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1415 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 119 -
Reverse Transfer Capacitance
C
rss
- 82 -
Gate resistance
R
g
- 2.6 3.2 Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
- 11.3 -
nC
V
DS
= 15V, I
D
= 12A
Total Gate Charge (V
GS
= 10V)
Q
g
- 25.1 -
Gate-Source Charge
Q
gs
- 3.5 -
Gate-Drain Charge
Q
gd
- 3.6 -
Turn-On Delay Time
t
D(on)
- 4.8 -
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25Ω, R
G
= 3Ω,
Turn-On Rise Time
t
r
- 16.5 -
Turn-Off Delay Time
t
D(off)
- 26.1 -
Turn-Off Fall Time
t
f
- 5.6 -
Reverse Recovery Time
t
rr
- 12.3 - ns
I
F
= 12A, di/dt = 500A/μs
Reverse Recovery Charge
Q
rr
- 10.4 - nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.