Dmn25d0ufa – Diodes DMN25D0UFA User Manual
Page 4
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
4 of 6
February 2014
© Diodes Incorporated
DMN25D0UFA
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
V
=
V
I = 100mA
GS
D
2.7
V
=
V
I = 500mA
GS
D
4.5
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0.4
0.6
0.8
1
1.2
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0
0.3
0.6
0.9
1.2
1.5
T = 125°C
A
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
1
10
100
0
5
10
15
20
25
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
= 5V
I =
A
DS
D
200m
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.001
0.01
0.1
1
10
0.1
1
10
100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
R
Limited
DS(ON)
T
= 150°C
T = 25°C
V
= 4.5V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board