Diodes DMN25D0UFA User Manual
Dmn25d0ufa, Product summary, Description
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
1 of 6
February 2014
© Diodes Incorporated
DMN25D0UFA
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25
°C
25V
4Ω @ V
GS
= 4.5V
0.32A
5Ω @ V
GS
= 2.7V
0.28A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Load
switch
• Portable
applications
•
Power Management Functions
Features
•
0.4mm ultra low profile package for thin application
• 0.48mm
2
package footprint, 16 times smaller than SOT23
• Low
V
GS(th),
can be driven directly from a battery
• Low
R
DS(on)
•
ESD Protected Gate (>6kV Human Body Mode)
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X2-DFN0806-3
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.00043 grams (approximate)
Ordering Information
(Note 4)
Part Number
Compliance Case
Packaging
DMN25D0UFA-7B
Standard
X2-DFN0806-3
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Equivalent Circuit
Bottom View
Top View
Package Pin Configuration
56 = Product Type Marking Code
DMN25D0UFA-7B
Top View
Bar Denotes Gate
and Source Side
X2-DFN0806-3
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
56
ESD HBM >6kV
e4