Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN25D0UFA User Manual
Page 2: Dmn25d0ufa

DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
2 of 6
February 2014
© Diodes Incorporated
DMN25D0UFA
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
25
V
Gate-Source Voltage
V
GSS
8
Continuous Drain Current, V
GS
= 4.5V
(Note 6)
I
D
0.32
A
T
A
= +70°C (Note 6)
0.25
(Note 5)
I
D
0.24 A
Pulsed Drain Current
(Note 7)
I
DM
1.2 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation
(Note 6)
P
D
0.63
W
(Note 5)
0.28
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
201
°C/W
(Note 5)
338
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
25
—
— V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
—
—
1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — 100 nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6
—
1.2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(on)
—
—
—
—
4
Ω
V
GS
= 4.5V, I
D
= 0.4A
5
V
GS
= 2.7V, I
D
= 0.2A
Forward Transfer Admittance
|Y
fs
|
—
1 - S
V
DS
= 5V, I
D
= 0.4A
Diode Forward Voltage
V
SD
—
0.76 1.2 V V
GS
= 0V, I
S
= 0.29A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 27.9 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
— 6.1 — pF
Reverse Transfer Capacitance
C
rss
— 2 — pF
Gate Resistance
R
g
— 26.4 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 0.36 — nC
V
DS
= 5V, V
GS
= 4.5V,
I
D
= 0.2A
Gate-Source Charge
Q
gs
— 0.06 — nC
Gate-Drain Charge
Q
gd
— 0.04 — nC
Turn-On Delay Time
t
D(on)
— 2.9 — ns
V
DS
= 6V, V
GS
= 4.5V,
I
D
= 0.5A, R
G
= 50Ω
Turn-On Rise Time
t
r
— 1.8 — ns
Turn-Off Delay Time
t
D(off)
— 6.6 — ns
Turn-Off Fall Time
t
f
— 2.3 — ns
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.