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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN25D0UFA User Manual

Page 2: Dmn25d0ufa

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DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMN25D0UFA



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

25

V

Gate-Source Voltage

V

GSS

8

Continuous Drain Current, V

GS

= 4.5V

(Note 6)

I

D

0.32

A

T

A

= +70°C (Note 6)

0.25

(Note 5)

I

D

0.24 A

Pulsed Drain Current

(Note 7)

I

DM

1.2 A



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 6)

P

D

0.63

W

(Note 5)

0.28

Thermal Resistance, Junction to Ambient

(Note 6)

R

θJA

201

°C/W

(Note 5)

338

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

25

— V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

1 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— — 100 nA

V

GS

= 8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.6

1.2 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(on)



4

V

GS

= 4.5V, I

D

= 0.4A

5

V

GS

= 2.7V, I

D

= 0.2A

Forward Transfer Admittance

|Y

fs

|

1 - S

V

DS

= 5V, I

D

= 0.4A

Diode Forward Voltage

V

SD

0.76 1.2 V V

GS

= 0V, I

S

= 0.29A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 27.9 — pF

V

DS

= 10V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss

— 6.1 — pF

Reverse Transfer Capacitance

C

rss

— 2 — pF

Gate Resistance

R

g

— 26.4 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

— 0.36 — nC

V

DS

= 5V, V

GS

= 4.5V,

I

D

= 0.2A

Gate-Source Charge

Q

gs

— 0.06 — nC

Gate-Drain Charge

Q

gd

— 0.04 — nC

Turn-On Delay Time

t

D(on)

— 2.9 — ns

V

DS

= 6V, V

GS

= 4.5V,

I

D

= 0.5A, R

G

= 50Ω

Turn-On Rise Time

t

r

— 1.8 — ns

Turn-Off Delay Time

t

D(off)

— 6.6 — ns

Turn-Off Fall Time

t

f

— 2.3 — ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.