Diodes DMG8880LK3 User Manual
Page 4
DMG8880LK3
Document number: DS32052 Rev. 4 - 2
4 of 6
December 2010
© Diodes Incorporated
DMG8880LK3
0
0.4
0.8
1.2
1.6
2.0
2.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, GA
T
E
T
HRES
HOL
D VOL
T
AGE
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
100
1,000
10,000
0
5
10
15
20
25
30
Fig. 9 Typical Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
10,000
0
5
10
15
20
25
30
I,
D
R
AI
N
-S
O
U
R
C
E
L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
r(
t)
,
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 76°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9