Diodes DMG4800LK3 User Manual
Page 4
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
4 of 6
November 2012
© Diodes Incorporated
DMG4800LK3
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
2.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
-50
-25
0
25
50
75
100
125 150
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
I = 250µA
D
I = 1mA
D
0
5
10
15
20
25
30
Fig. 8 Typical Drain-Source Leakage Current vs Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
Fig. 9 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
4
8
12
16
20
Fig. 10 Gate-Source Leakage Current vs. Voltage
V
, GATE SOURCE VOLTAGE(V)
GS
1
10
100
1,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
4
8
12
16
20
Fig. 11 Gate-Source Leakage Current vs. Voltage
V
, GATE SOURCE VOLTAGE(V)
GS
1
10
100
1,000
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 12 Single Pulse Maximum Power Dissipation
0.0001 0.001 0.01
0.1
1
10
100
1,000
t , PULSE DURATION TIME (s)
1
0
10
20
30
40
50
60
70
80
90
100
P
(p
k
),
P
EAK
T
R
ANSI
EN
T
P
O
WE
R
(W
)
Single Pulse
R
= 77°C/W
R
(t) = R
* r(t)
θ
θ
θ
JA
JA
JA
T - T = P * R
(t)
J
A
JA
θ