Diodes DMG4800LK3 - Manual (Page 2)

DMG4800LK3
Document number: DS31959 Rev. 3 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4800LK3
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
10.0
6.5
A
Pulsed Drain Current (Note 6) I
DM
48 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.71 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C R θJA 72.9 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1.0 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 - 1.6 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
12
16 17
24
m Ω
V
GS
= 10V, I
D
= 9A
V GS = 4.5V, I D = 7A
Forward Transfer Admittance |Y
fs
| - 10 - S V
DS
= 10V, I
D
= 9A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 798 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 128 - pF
Reverse Transfer Capacitance C
rss
- 122 - pF
Gate Resistance R
g
- 1.37 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 8.7 - nC
V GS = 5V, V DS = 15V,
I D = 9A
Gate-Source Charge Q gs
- 1.7 - nC
Gate-Drain Charge Q
gd
- 2.4 - nC
Turn-On Delay Time t
D(on)
- 5.03 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 15 Ω, R
G
= 6 Ω, I
D
= 1A
Turn-On Rise Time t r
- 4.50 - ns
Turn-Off Delay Time t
D(off)
- 26.33 - ns
Turn-Off Fall Time t
f
- 8.55 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.