Diodes DMG4800LK3 User Manual
Page 3
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
3 of 6
November 2012
© Diodes Incorporated
DMG4800LK3
NEW PROD
UC
T
0
0.5
1
1.5
2
Fig.1 Typical Output Characteristics
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 4.5V
GS
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE(V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= 5.0V
DS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
D
S
(on)
Ω
0
5
10
15
20
25
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
V
= 2.5V
GS
V
= 4.5V
GS
0
5
10
15
20
25
30
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
I , DRAIN CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
R
D
R
AI
N
S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(o
n
)
Ω
V
= 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125 150
Fig. 5 On-Resistance Variation with Temperature
T , JUNCTION TEMPERATURE ( C)
J
°
R
, DRAIN-
T
O-
S
O
UR
CE
R
ESIS
T
ANCE (
N
ORM
A
L
IZ
E
D)
DS
(O
N)
V
= 4.5A
I = 5A
GS
D
V
= 10A
I = 10A
GS
D
-50
-25
0
25
50
75
100
125 150
Fig. 6 Typical Static Drain-Source On-State Resistance
vs. Ambient Temperature
T AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
0.04
0.05
R
S
T
A
T
IC
D
R
AI
N
S
O
U
R
C
E
O
N
-S
T
A
T
E
RE
SI
ST
A
NCE
(
)
DS
(O
N
)
Ω
V
= 4.5A
I = 5A
GS
D
V
= 10A
I = 10A
GS
D