Diodes DMG4468LK3 User Manual
Page 4
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
4 of 6
June 2013
© Diodes Incorporated
DMG4468LK3
NE
W
P
R
OD
UC
T
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125 150
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
H
R
ESH
O
L
D
VO
L
T
A
G
E
(V)
G
S
(T
H
)
I = 250µA
D
I = 1mA
D
1
10
100
1,000
10,000
0
5
10
15
20
25
30
Fig. 8 Typical Drain-Source Leakage Current vs Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
12
14
16
18
20
0.2
0.4
0.6
0.8
1.0
1.2
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
Fig. 9 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
T = 25°C
A
2
4
6
8
10
12
14
16
18
20
Fig. 10 Gate-Source Leakage Current vs. Voltage
V
, GATE SOURCE VOLTAGE(V)
GS
1
10
100
1,000
I
,
L
E
AKAG
E
C
U
R
R
E
N
T
(n
A)
G
S
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
1
10
100
1,000
2
4
6
8
10
12
14
16
18
20
Fig. 11 Gate-Source Leakage Current vs. Voltage
V
, GATE SOURCE VOLTAGE(V)
GS
I
,
L
EAK
AG
E
C
U
R
R
EN
T
(n
A)
G
S
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 12 Single Pulse Maximum Power Dissipation
0
10
20
30
40
50
60
70
80
90
100
0.0001 0.001 0.01
0.1
1
10
100
1,000
Single Pulse
R
= 77°C/W
R
(t) = R
* r(t)
θ
θ
θ
T - T = P * R
(t)
J
A
JA
θ
JA
JA
JA
t , PULSE DURATION TIME (s)
1
P(p
k
),
P
EAK
T
R
A
N
SI
EN
T
PO
W
E
R
(W
)