Dmn2990udj new prod uc t, Dmn2990udj – Diodes DMN2990UDJ User Manual
Page 4
DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
4 of 6
September 2012
© Diodes Incorporated
DMN2990UDJ
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V
, G
A
T
E
THRES
H
O
L
D VOL
T
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
T
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
50
40
30
20
10
0
10
15
20
5
0
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
2
4
6
8
10
12
14
16
18
20
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
E
AKA
GE
CURRENT
(
n
A)
DS
S
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
V
= 10V
I = 250mA
DS
D
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
0.001
0.1
1
1
10
100
P = 10s
W
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W
R
Limited
DS(ON)
T
= 150°C
T = 25°C
Single Pulse
J(MAX)
A
0.01
0.1
V
, DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
DS
I
, DRAI
N C
URRENT
(
A
)
D
R
Limited
DS(on)