Diodes DMN2990UDJ - Manual (Page 2)

DMN2990UDJ
Document number: DS35401 Rev. 7 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMN2990UDJ
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25
°C
T
A
= +70
°C
I
D
450
350
mA
Continuous Drain Current (Note 5) V
GS
= 1.8V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
330
220
mA
Pulsed Drain Current (Note 6) I DM
800 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient R θJA 360 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current @T
c
= +25°C I
DSS
- - 50
nA
V
DS
= 5V, V
GS
= 0V
- - 100 V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 0.60 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
- 0.75 1.2 V
GS
= 2.5V, I
D
= 50mA
- 0.90 1.8 V
GS
= 1.8V, I
D
= 20mA
- 1.2 2.4 V
GS
= 1.5V, I
D
= 10mA
- 2.0 - V
GS
= 1.2V, I
D
= 1mA
Forward Transfer Admittance |Y
fs
| 180 - - mS V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage (Note 6) V SD
- 0.6 1.0 V V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 27.6 - pF
V DS = 16V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 4.0 - pF
Reverse Transfer Capacitance C
rss
- 2.8 - pF
Total Gate Charge Q
g
- 0.5 - nC
V GS = 4.5V, V DS = 10V,
I D = 250mA
Gate-Source Charge Q gs
- 0.07 - nC
Gate-Drain Charge Q
gd
- 0.07 - nC
Turn-On Delay Time t
D(on)
- 4.0 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= 200mA
Turn-On Rise Time t r
- 3.3 - ns
Turn-Off Delay Time t
D(off)
- 19.0 - ns
Turn-Off Fall Time t
f
- 6.4 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.