Diodes DMN26D0UT - Manual (Page 3)

DMN26D0UT
Document number: DS31854 Rev. 2 - 2
3 of 6
www.diodes.com
September 2009
© Diodes Incorporated
DMN26D0UT
NEW PROD
UC
T
1
2
3
4
5
0.01 0.1 1
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRAI
N-
S
OU
RCE
ON-
RESIS
T
ANCE (
)
DS
(O
N)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0.01 0.1 1
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
1
2
3
4
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N
)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
, D
R
AI
N-
S
O
U
R
C
E
ON-
RESIS
T
A
NCE (
N
O
RM
A
L
IZ
E
D)
DS
O
N
V = 2.5V
I = 150mA
GS
D
V = 4.5V
I = 500mA
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
NC
E (
)
DS
O
N
Ω
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 150mA
GS
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A