Diodes DMN26D0UT - Manual (Page 2)

DMN26D0UT
Document number: DS31854 Rev. 2 - 2
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
DMN26D0UT
NEW PROD
UC
T
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 100
μA
Zero Gate Voltage Drain Current @ T
C
= 25°C I
DSS
⎯ ⎯ 500 nA V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯
±1
±500
±100
μA
nA
nA V GS = ±10V, V DS = 0V
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V
GS(th)
0.5 ⎯ 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
⎯
⎯
1.8
2.4
2.9
3.7
5.4 3.0
4.0
6.0
10.0
15.0
Ω
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 20mA
V GS = 1.5V, I D = 10mA
V GS = 1.2V, I D = 1mA
Forward Transconductance |Y
fs
| ⎯ 242 ⎯ mS V
DS
=10V, I
D
= 0.1A
Source-Drain Diode Forward Voltage V
SD
0.5 ⎯ 1.0 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ 14.1 ⎯ pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 2.9 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 1.6 ⎯ pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5V (Note 5)
Turn-On Delay Time t
d(on)
⎯ 3.8 ⎯
ns
V
GS
= 4.5V, V
DD
= 10V
I
D
= 200mA, R
G
= 2.0 Ω
Rise Time t r
⎯ 7.9 ⎯
Turn-Off Delay Time t
d(off)
⎯ 13.4 ⎯
Fall Time t
f
⎯ 15.2 ⎯
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
0 0.5 1 1.5 2 2.5 3
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
V = 1.5V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
0.1
0.2
0.3
0.4
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
DS