Diodes DMN26D0UFB4 - Manual (Page 4)

DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
4 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMN26D0UFB4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
0 4 8 12 16 20
0
5
10
15
20
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
0.000001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001 0.00001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 278°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5