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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN26D0UFB4 User Manual

Page 2: Dmn26d0ufb4

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DMN26D0UFB4

Document number: DS31775 Rev. 7 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMN26D0UFB4






Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±10

V

Continuous Drain Current (Note 4) V

GS

= 4.5V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

240
190

mA

Continuous Drain Current (Note 4) V

GS

= 1.8V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

180
140

mA

Pulsed Drain Current - T

P

= 10µs

I

DM

805 mA




Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Total Power Dissipation (Note 4) @T

A

= 25°C

P

D

350 mW

Thermal Resistance, Junction to Ambient (Note 4)

R

θJA

357

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C





Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 100

μA

Zero Gate Voltage Drain Current @ T

C

= 25°C

I

DSS

500 nA

V

DS

= 20V, V

GS

= 0V

Gate-Body Leakage

I

GSS

±1

±100

μA
nA

V

GS

= ±10V, V

DS

= 0V

V

GS

= ±5V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th)

0.45

1.05 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)




1.8
2.5
3.4
4.7

3.0
4.0
6.0

10.0

Ω

V

GS

= 4.5V, I

D

= 100mA

V

GS

= 2.5V, I

D

= 50mA

V

GS

= 1.8V, I

D

= 20mA

V

GS

= 1.5V, I

D

= 10mA

Forward Transconductance

|Y

fs

|

180 242

mS

V

DS

= 10V, I

D

= 0.1A

Source-Drain Diode Forward Voltage

V

SD

0.5

1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

14.1

pF

V

DS

= 15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

2.9

pF

Reverse Transfer Capacitance

C

rss

1.6

pF

SWITCHING CHARACTERISTICS
Turn-On Delay Time

t

d(on)

3.8

ns

V

GS

= 4.5V, V

DD

= 10V

I

D

= 200mA, R

G

= 2.0

Rise Time

t

r

7.9

Turn-Off Delay Time

t

d(off)

13.4

Fall Time

t

f

15.2

Notes:

4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5.

Short duration pulse test used to minimize self-heating effect.