Diodes DMN26D0UFB4 User Manual
Dmn26d0ufb4, Product summary, Description and applications
DMN26D0UFB4
Document number: DS31775 Rev. 7 - 2
1 of 6
March 2012
© Diodes Incorporated
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25°C
20V
3.0
Ω @ V
GS
= 4.5V
240mA
6.0
Ω @ V
GS
= 1.8V
170mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
•
Power management functions
Features and Benefits
• N-Channel
MOSFET
• Low
On-Resistance:
• 3.0
Ω @ 4.5V
• 4.0
Ω @ 2.5V
• 6.0
Ω @ 1.8V
• 10
Ω @ 1.5V
•
Very Low Gate Threshold Voltage, 1.05V max
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
• ESD
Protected
Gate
•
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X2-DFN1006-3
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.001 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN26D0UFB4-7
X2-DFN1006-3
3,000/Tape & Reel
DMN26D0UFB4-7B
X2-DFN1006-3
10,000/Tape & Reel
Notes:
1. No purposefully added lead.
2.
Diodes Inc.’s “Green” policy can be found on our w
3. For packaging details, go to our website at
Marking Information
X2-DFN1006-3
Bottom View
Equivalent Circuit
Top View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
DMN26D0UFB4-7B
DMN26D0UFB4-7
Top View
Dot Denotes Drain Side
Top View
Bar Denotes Gate
and Source Side
M1 = Product Type Marking Code
M1
M1