Diodes DMN26D0UDJ - Manual (Page 4)

DMN26D0UDJ
Document number: DS31481 Rev. 8 - 2
4 of 5
www.diodes.com
May 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD
UC
T
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, GA
TE TH
RESHOL
D VO
LT
AG
E
(
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
5
10
15
20
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
C
iss
C
rss
C
oss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
SOT963
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05 -
c 0.120 0.180 0.150
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ
e1 0.70 Typ
All Dimensions in mm
L
c
E
D
e1
e
E1
b (6 places)
A
A1