Diodes DMN26D0UDJ User Manual
Dmn26d0udj new prod uc t, Product summary, Description
DMN26D0UDJ
Document number: DS31481 Rev. 8 - 2
1 of 5
May 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
20V
3.0Ω @ V
GS
= 4.5V
240mA
6.0Ω @ V
GS
= 1.8V
180mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power management functions
Features
Dual
N-Channel
MOSFET
Low
On-Resistance:
3.0Ω
@ 4.5V
4.0Ω
@ 2.5V
6.0Ω
10Ω
Very Low Gate Threshold Voltage, 1.05V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case:
SOT963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN26D0UDJ-7
SOT963
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
(Note 5)
Notes:
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
SOT963
Top View
Top View
Schematic and Transistor Diagram
ESD PROTECTED
S
1
D
1
D
2
S
2
G
1
G
2
M1 = Product Type Marking Code
S
1
D
1
D
2
S
2
G
1
G
2
M1