Dmn26d0udj new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN26D0UDJ User Manual
Page 2: Electrical characteristics, Dmn26d0udj
DMN26D0UDJ
Document number: DS31481 Rev. 8 - 2
2 of 5
May 2014
© Diodes Incorporated
DMN26D0UDJ
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Drain Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
10
V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
240
190
mA
Continuous Drain Current (Note 6) V
GS
= 1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
180
140
mA
Pulsed Drain Current - T
P
= 10µs
I
DM
805 mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 6)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
409 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 100μA
Zero Gate Voltage Drain Current
@ T
J
= +25°C
@T
J
= +85°C (Note 8)
I
DSS
500
1.7
nA
µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 2.6V, V
GS
= 0V
Gate-Body Leakage
I
GSS
1
100
μA
nA
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45 0.8 1.05 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
1.8 3.0
Ω
V
GS
= 4.5V, I
D
= 100mA
2.5 4.0
V
GS
= 2.5V, I
D
= 50mA
3.4 6.0
V
GS
= 1.8V, I
D
= 20mA
4.7 10.0
V
GS
= 1.5V, I
D
= 10mA
9.5
V
GS
= 1.2V, I
D
= 1mA
Forward Transconductance
|Y
fs
|
180 240
mS
V
DS
=10V, I
D
= 0.1A
Source-Drain Diode Forward Voltage
V
SD
0.5 0.8 1.0 V
V
GS
= 0V, I
S
= 10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
14.1
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
2.9
pF
Reverse Transfer Capacitance
C
rss
1.6
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5V (Note 8)
Turn-On Delay Time
t
d(on)
3.8
ns
V
GS
= 4.5V, V
DD
= 10V
I
D
= 200mA, R
G
= 2.0Ω
Rise Time
t
r
7.9
Turn-Off Delay Time
t
d(off)
13.4
Fall Time
t
f
15.2
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design, not subject to production testing.