Diodes DMN2400UFD - Manual (Page 4)

DMN2400UFD
Document number: DS35475 Rev. 4 - 2
4 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN2400UFD
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE TH
RESHO
L
D VOL
T
AG
E
(
V)
GS(
T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss 0.1
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N-
S
O
U
R
C
E L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
,
G
A
T
E
-S
O
U
RCE
VO
L
T
AG
E (
V
)
GS
V = 10V
I = 250mA
DS
D