Diodes DMN2400UFD - Manual (Page 2)

DMN2400UFD
Document number: DS35475 Rev. 4 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN2400UFD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.9
0.7
A
Continuous Drain Current (Note 6) V GS = 2.5V
Steady
State
T
A
= +25°C
T A = +70°C
I D
0.7
0.5
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
3.0 A
Maximum Body Diode Forward Current (Note 6) I
S
0.8 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.4 W
Thermal Resistance, Junction to Ambient (Note 5) Steady state R θJA 280 °C/W
Total Power Dissipation (Note 6) P D
0.8 W
Thermal Resistance, Junction to Ambient (Note 6) Steady state R θJA 140 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJc 112 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
80
100
nA
V DS = 4.5V, V GS = 0V
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45 — 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 0.35 0.6
Ω
V
GS
= 4.5V, I
D
= 200mA
— 0.45 0.8 V GS = 2.5V, I D = 200mA
— 0.6 1.0 V
GS
= 1.8V, I
D
= 100mA
— 0.7 1.6 V
GS
= 1.5V, I
D
= 50mA
Forward Transfer Admittance |Y
fs
| — 1.4 — S V
DS
= 3V, I
D
= 200mA
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 37.0 — pF
V DS =16V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
— 5.7 — pF
Reverse Transfer Capacitance C
rss
— 4.2 — pF
Gate Resistance R
g
— 68 — Ω V
DS
= 0V, V
GS
= 0V,
Total Gate Charge Q g
— 0.5 — nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
— 0.07 — nC
Gate-Drain Charge Q
gd
— 0.1 — nC
Turn-On Delay Time t D(on)
— 4.06 — ns
V
DD
= 10V, V
GS
= 4.5V,
R L = 47 Ω, R
G = 10 Ω,
I D = 200mA
Turn-On Rise Time t
r
— 7.28 — ns
Turn-Off Delay Time t
D(off)
— 13.74 — ns
Turn-Off Fall Time t f
— 10.54 — ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.