Dmn2300ufd, A product line of diodes incorporated – Diodes DMN2300UFD User Manual
Page 5
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
5 of 7
September 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
Fig. 10 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N-
S
OUR
CE
ON-
RESIS
T
ANCE (
NORM
A
L
IZ
E
D)
DS
O
N
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
= 1.8V
I = 100mA
GS
D
V
= 4.5V
I = 1.0A
GS
D
V
= 1.5V
I = 50mA
GS
D
V
= 2.5V
I = 500mA
GS
D
Fig. 11 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N-
S
OURCE
ON-
RES
IST
A
NC
E (
)
DS
O
N
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
V
= 1.5V
I = 50mA
GS
D
V
= 1.8V
I = 100mA
GS
D
V
= 4.5V
I = 1.0A
GS
D
V
= 2.5V
I = 500mA
GS
D
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 13 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
2
4
6
8
10
12
14
16
18
20
1
10
100
1,000
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2
4
6
8
10
12
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig.15 Leakage Current vs. Gate-Source Voltage
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A