Diodes DMN2016UTS - Manual (Page 3)

DMN2016UTS
Document number: DS31995 Rev. 1 - 2
3 of 6
www.diodes.com
December 2009
© Diodes Incorporated
DMN2016UTS
NEW PROD
UC
T
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRA
IN-
S
OURCE
ON-
R
E
S
IST
A
NCE
(
)
DS
(O
N)
Ω
V = 1.8V
GS
V = 4.5V
GS
V = 10V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, D
RAIN-
SOUR
CE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZ
E
D)
DS
(O
N)
V = 8.0V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0
0.01
0.02
0.03
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRA
IN
-S
OURCE
ON-
R
ESI
ST
ANC
E
(
)
DS
(O
N
)
Ω
V = 8.0V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0
0.4
0.8
1.2
1.6
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
,
GA
T
E
T
HRES
HOL
D V
O
L
T
AGE (
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A