Diodes DMN2016UTS User Manual
Dmn2016uts new prod uc t, Features, Mechanical data
DMN2016UTS
Document number: DS31995 Rev. 1 - 2
1 of 6
December 2009
© Diodes Incorporated
DMN2016UTS
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 1)
•
ESD Protected Up To 2KV
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
TSSOP-8L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.039 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
8.58
5.73
A
Pulsed Drain Current (Note 4)
I
DM
36 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
0.88 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
R
θJA
141.57 °C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
TSSOP-8L
TOP VIEW
Internal Schematic
Top View
Pin Configuration
BOTTOM VIEW
ESD PROTECTED TO 2kV
G1
S1
S2
G2
D1
D2
8
7
6
5
1
2
3
4
D
S1
S1
G1
D
S2
S2
G2