Diodes DMN2016UTS - Manual (Page 2)

DMN2016UTS
Document number: DS31995 Rev. 1 - 2
2 of 6
www.diodes.com
December 2009
© Diodes Incorporated
DMN2016UTS
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.4 0.72 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
11
13 14.5
16.5
mΩ
V
GS
= 4.5V, I
D
= 9.4A
V GS = 2.5V, I D = 8.3A
Forward Transfer Admittance |Y
fs
| - 19 - S V
DS
= 5V, I
D
= 9.4A
Diode Forward Voltage V
SD
- 0.65 1.2 V V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 1495 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 161 - pF
Reverse Transfer Capacitance C rss
- 152 - pF
Gate Resistance R
g
- 1.42 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 16.5 - nC
V
GS
= 4.5V, V
DS
= 10V,
I D = 9.4A
Gate-Source Charge Q gs
- 2.5 - nC
Gate-Drain Charge Q
gd
- 3.2 - nC
Turn-On Delay Time t
D(on)
- 10.39 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
GEN
= 6 Ω, I
D
= 1A, R
1
= 10 Ω
Turn-On Rise Time t
r
- 11.66 - ns
Turn-Off Delay Time t
D(off)
- 59.38 - ns
Turn-Off Fall Time t
f
- 16.27 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 1.2V
GS
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 1.5V
GS
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A