Dmn2016lhab – Diodes DMN2016LHAB User Manual
Page 4
DMN2016LHAB
Document number: DS36133 Rev. 4 - 2
4 of 6
March 2013
© Diodes Incorporated
DMN2016LHAB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
2
4
6
8
10
12 14
16 18 20
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
100
10
1,000
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0
5
10
15
20
25
30
35
40
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 8 Gate Charge
0
2
4
6
8
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
10
V
= 10V
I = A
DS
D
6
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 SOA, Safe Operation Area
DS
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
10
1
0.1
0.01
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= 12V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
DS
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
10
1
0.1
0.01
R
Limited
DS(on)
T
= 150°C
T = 60°C
J(max)
A
V
= 12V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
0.001
r(t
),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
0.01
0.1
1
R
(t) = r(t) * R
R
= 100°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse