Diodes DMN2016LHAB User Manual
Product summary, Description, Applications

DMN2016LHAB
Document number: DS36133 Rev. 4 - 2
1 of 6
March 2013
© Diodes Incorporated
DMN2016LHAB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)max
I
D
T
A
= +25°C
20V
15.5m
@ V
GS
= 4.5V
7.5A
16.5m
@ V
GS
= 4.0V
7.3A
19m
@ V
GS
= 3.1V
6.9A
20m
@ V
GS
= 2.5V
6.7A
30m
@ V
GS
= 1.8V
5.4A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power Management Functions
Battery
Pack
Load
Switch
Features
Low
On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case:
U-DFN2030-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.012 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2016LHAB-7
U-DFN2030-6
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”
Marking Information
ESD PROTECTED TO 2kV
26W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 12 for 2012)
WW = Week code (01 to 53)
Top View
Equivalent Circuit
S2 S2 G2
S1 S1 G1
Bottom Drain Contact
26W
YYW
W
S1
S1
G2
G1
S2
S2
D1/D2
Bottom View
U-DFN2030-6
e4