Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2016LHAB User Manual
Page 2
DMN2016LHAB
Document number: DS36133 Rev. 4 - 2
2 of 6
March 2013
© Diodes Incorporated
DMN2016LHAB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.5
5.8
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
7.7
6.0
A
Pulsed Drain Current (10μs pulse, duty cycle = 1% )
I
DM
45 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.75
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
106
°C/W
t < 10s
100
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.65
W
T
A
= +70°C
1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
78
°C/W
t < 10s
72
Thermal Resistance, Junction to Case
R
θJC
11.4
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 0.71 1.1 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
13 15.5
m
V
GS
= 4.5V, I
D
= 4.0A
13.5 16.5
V
GS
= 4.0V, I
D
= 4.0A
14 19
V
GS
= 3.1V, I
D
= 4.0A
15 20
V
GS
= 2.5V, I
D
= 4.0A
21 30
V
GS
= 1.8V, I
D
= 3.5A
Forward Transfer Admittance
|Y
fs
|
— 25 — S
V
DS
= 5V, I
D
= 6A
Diode Forward Voltage
V
SD
— 0.75 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1550 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 166 — pF
Reverse Transfer Capacitance
C
rss
— 145 — pF
Gate Resistance
R
g
— 1.37 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 2.5V)
Q
g
— 8.4 — nC
V
DS
= 10V, I
D
= 6A
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 16 — nC
Gate-Source Charge
Q
gs
— 2.3 — nC
Gate-Drain Charge
Q
gd
— 2.5 — nC
Turn-On Delay Time
t
D(on)
— 6.9 — ns
V
DD
=
10V, R
L
=
1.7
,
V
GS
=
5.0V, R
G
=
3
Turn-On Rise Time
t
r
— 15.5 — ns
Turn-Off Delay Time
t
D(off)
— 40.9 — ns
Turn-Off Fall Time
t
f
— 12 — ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6.
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Repetitive rating, pulse width limited by junction temperature
8. Guaranteed by design. Not subject to product testing