Dmn2011ufde – Diodes DMN2011UFDE User Manual
Page 5
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
5 of 7
March 2014
© Diodes Incorporated
DMN2011UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = -55°C
A
T = 85°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
100
1000
10000
0
2
4
6
8
10
12
14 16
18
20
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
V
= 10V
I =
A
DS
D
8.5
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T
= 150°C
T = 25°C
J(max)
A
V
= 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
(t) = r(t) * R
R
= 207°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA