Diodes DMN2011UFDE - Manual (Page 2)

DMN2011UFDE
D atasheet number: DS36376 Rev. 3 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
DMN2011UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
11.7
9.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
14.2
11.4
A
Continuous Drain Current (Note 6) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.8
8.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
13.2
10.6
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
80 A
Maximum Body Diode Continuous Current I
S
2.5 A
Avalanche Current (Notes 7) L = 0.1mH I
AS
18 A
Avalanche Energy (Notes 7) L = 0.1mH E
AS
17 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.61
W
T
A
= +70°C 0.39
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
209
°C/W
t<10s 142
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.97
W
T
A
= +70°C 1.27
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
64
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 6) R
θJC
9.8
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C