Dmn2011ufde – Diodes DMN2011UFDE User Manual
Page 4
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
4 of 7
March 2014
© Diodes Incorporated
DMN2011UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, DRAI
N
-S
O
URCE
O
N-
RESI
ST
AN
CE (
)
DS
(O
N)
V
= 2.5V
GS
V
= 4.5V
GS
V
= 1.8V
GS
V
= 1.5V
GS
0
0.005
0.01
0.015
0.02
0.025
0.03
0
2
4
6
8
10
12
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
I = 3.0A
D
I = 8.5A
D
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
E
S
IST
A
NCE (
)
DS
(O
N)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.4
0.8
1.2
1.6
2
-50
-25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AI
N-
S
O
U
R
C
E
ON
-R
E
S
IS
TA
N
C
E
(N
OR
MA
L
IZ
E
D
)
DS
(O
N
)
V
=
V
I = 3A
GS
D
1.8
V
=
V
I = 5A
GS
D
2.5
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
V
= .5V
I = 5A
GS
D
2
V
=
V
I = 3A
GS
D
1.8
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
I = 1mA
D
I = 250µA
D
V
, G
A
TE THR
ESHO
L
D V
O
LT
AG
E
(
V
)
GS
(t
h)