Diodes DMN2013UFDE - Manual (Page 4)

DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
4 of 6
www.diodes.com
April 2013
© Diodes Incorporated
DMN2013UFDE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
TE
T
H
RESHO
L
D V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
S
T = 25°C
A
100
1,000
10,000
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
C
iss
f = 1MHz
C
oss
C
rss
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 10V, I = A
DS D
8.5
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = 8V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W