Diodes DMN2013UFDE - Manual (Page 2)

DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
2 of 6
www.diodes.com
April 2013
© Diodes Incorporated
DMN2013UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.5
8.5
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
12.5
10.0
A
Continuous Drain Current (Note 7) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.4
7.5
A
t <1 0s
T
A
= +25°C
T
A
= +70°C
I
D
11.2
8.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
80 A
Maximum Body Diode Continuous Current I
S
2.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
189
°C/W
t<10s 132
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C 1.31
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
R
JA
61
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 7) R
JC
9.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±2 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
8.4 11
m 
V
GS
= 4.5V, I
D
= 8.5A
9.8 13 V
GS
= 2.5V, I
D
= 8.5A
12 30 V
GS
= 1.8V, I
D
= 1A
15 50 V
GS
= 1.5V, I
D
= 0.5A
Forward Transfer Admittance |Y
fs
| — 10 — S V
DS
= 5V, I
D
= 4A
Diode Forward Voltage V
SD
— — 1.2 V V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2453 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 275 — pF
Reverse Transfer Capacitance C
rss
— 257 — pF
Gate Resistance R
g
— 1.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 14.3 — nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 25.8 — nC
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 2.1 — nC
Turn-On Delay Time t
D(on)
— 9.9 — ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
Turn-On Rise Time t
r
— 24.5 — ns
Turn-Off Delay Time t
D(off)
— 66.4 — ns
Turn-Off Fall Time t
f
— 20.8 — ns
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing