Diodes DMN2005LP4K - Manual (Page 4)

DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
4 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMN2005LP4K
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE TH
RESHO
L
D VOL
T
AG
E
(
V)
GS(
T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
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