Diodes DMN2005LP4K User Manual
Features, Mechanical data, Ordering information

DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
1 of 6
June 2012
© Diodes Incorporated
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Very Low Gate Threshold Voltage, 0.9V Max.
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Ultra-Small Surface Mount Package
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
ESD Protected Gate
•
Ultra Low Profile Package
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X2-DFN1006-3
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
• Terminals:
Finish
⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.001 grams
Ordering Information
(Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2005LP4K-7 DN
7
8
3000
DMN2005LP4K-7B DN
7
8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
e4
X2-DFN1006-3
Bottom View
Equivalent Circuit
Top View
Pin-Out
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
DN = Product Type Marking Code
DN
DN
DMN2005LP4K-7
DMN2005LP4K-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side