Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2005LP4K User Manual
Page 2
DMN2005LP4K
Document number: DS30799 Rev. 6 - 2
2 of 6
June 2012
© Diodes Incorporated
DMN2005LP4K
Maximum Ratings
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±10
V
Drain Current per element (Note 5) Continuous
Pulsed (Note 6)
I
D
300
350
mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
400 mW
Thermal Resistance, Junction to Ambient
R
θJA
280 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (per element) (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯
⎯
V
V
GS
= 0V, I
D
= 100µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
10 µA
V
DS
= 17V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±5
µA
V
GS
=
±8V, V
DS
= 0V
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage
V
GS(th)
0.53
⎯
0.9 V
V
DS
= V
GS
, I
D
= 100µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
⎯
0.35
0.4
0.45
0.55
0.65
1.5
1.7
1.7
3.5
3.5
Ω
V
GS
= 4V, I
D
= 10mA
V
GS
= 2.7V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
Forward Transfer Admittance
⏐Y
fs
⏐
40
⎯
⎯
mS
V
DS
= 3V, I
D
= 10mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
37.1
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
6.5
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
4.8
⎯
pF
Switching Time
Turn-on Time
t
on
⎯
4.06
⎯
nS
V
DD
= 10V, R
l
= 47
Ω, V
GEN
= 4.5V,
R
GEN
= 10
Ω.
Turn-off Time
t
off
⎯
13.7
⎯
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.