Dmn2004k – Diodes DMN2004K User Manual
Page 4
DMN2004K
Document number: DS30938 Rev. 9 - 2
4 of 6
July 2013
© Diodes Incorporated
DMN2004K
I , DRAIN CURRENT (A)
Figure 7
D
On-Resistance vs. Drain Current and Gate Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.2
0.4
0.6
0.8
1
1.2
V
= 1.8V
GS
V
= 4.5V
GS
V
= 2.5V
GS
T = 25°C
J
R
, ST
A
T
IC
D
R
AI
N
-S
O
U
R
C
E
ON-
RE
S
IST
A
NCE (
)
D
S
(on)
T , JUNCTION TEMPERATURE ( C)
Figure 8
j
°
Static Drain-Source, On-Resistance vs. Temperature
-50
-25
0
25
50
75
100
125
150
0
0.2
0.3
0.5
0.1
0.4
V
= 10V,
GS
I = 280mA
D
V
= 4.5V,
GS
I = 540mA
D
R
, S
T
A
T
IC DRA
IN-S
O
U
R
C
E
ON-
RE
S
IST
A
NCE (
) (
N
O
R
M
A
L
IZ
E
D)
DS
(o
n
)
I
,
DRAIN-
S
OURCE L
EAK
AGE CUR
RENT
(
n
A)
DS
S
V
,
Figure 9 Drain Source Leakage Current vs. Voltage
DS
DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1,000
10,000
2
4
6
8
10
12
14
16
18
20
TJ = 100°C
TJ = 150°C
T = 25 °C
J
I
, REVE
RSE D
R
AIN CU
RRENT
(
A
)
DR
0.001
0.01
0.1
0.5
0
1
1
V
, SOURCE
Figure 10 Reverse Drain Current vs. Source-Drain Voltage
SD
DRAIN-
VOLTAGE (V)
V
= 0V
GS
T
= -55 C
A
°
T = 150 C
A
°
T = -25 C
A
°
T = 0 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
1,000
I , DRAIN CURRENT (mA)
D
Figure 11 Forward Transfer Admittance vs. Drain Current
1
10
100
0.01
0.1
1
|Y
|,
F
O
R
W
A
RD
T
R
A
N
SF
ER
ADM
ITT
AN
CE (
S
)
fs
V
= 10V
GS
T =
A
150 C
°
T =
A
-55 C
°
T =
A
85 C
°
T = 25 C
A
°
V
, DRAIN SOURCE VOLTAGE (V)
DS
Figure 12 Capacitance Variation
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
18
20
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
f = 1MHz
V
= 0V
GS
C
iss
C
oss
C
rss