Dmn2004k – Diodes DMN2004K User Manual
Page 3
DMN2004K
Document number: DS30938 Rev. 9 - 2
3 of 6
July 2013
© Diodes Incorporated
DMN2004K
0
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.3
0.6
0.9
V
= 1.2V
GS
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.2V
GS
V
= 1.4V
GS
V
= 1.6V
GS
V
, GATE-SOURCE VOLTAGE (V)
Figure 2
GS
Reverse Drain Current vs. Source-Drain Voltage
100
0
1,000
I,
D
D
R
AI
N
C
U
R
R
E
N
T
(mA
)
200
300
400
500
600
700
800
900
0.4
0.8
1.2
1.6
2
V
= 10V
Pulsed
DS
T = 150 C
A
°
T = -55 C
A
°
T = 5 C
A
8
°
T = 25 C
A
°
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
ch
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
),
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-75
-50
-25
0
25
50
75
100
125 150
V
= 10V
I = 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
D,
1
0.2
0.4
0.6
0.8
1.0
V
= 10V
Pulsed
GS
T = 150 C
A
°
T = -55 C
A
°
T = -25 C
A
°
T = 0 C
A
°
T = 25 C
A
°
T = 125 C
A
°
T = 85 C
A
°
R
, ST
A
T
IC
DRAIN-
S
OURCE
O
N
-R
ESI
ST
ANCE (
)
D
S
(on)
0.5
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
D
0.1
1
V
= 5V
Pulsed
GS
T = 150 C
A
°
T = -55 C
A
°
T = -25 C
A
°
T = 0 C
A
°
T = 25 C
A
°
T = 125 C
A
°
T = 85 C
A
°
0.2
0.4
0.6
0.8
1.0
0.5
R
, S
T
A
T
IC
D
R
AI
N-
S
O
U
R
C
E
ON-
RES
IST
A
NCE
(
)
D
S
(on)
6
0.2
0.1
0
0.6
0.5
0.4
0.3
0.7
1.0
0.9
0.8
0
V
, GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
GS
4
2
T = 25°C
A
I = 540mA
D
R
, ST
A
T
IC DRAI
N-
S
OURCE
ON-
R
E
S
IST
A
NCE
(
) (
N
ORM
A
L
IZ
E
D)
DS
(o
n
)