Diodes DMN1019USN - Manual (Page 4)

DMN1019USN
Document number: DS36999 Rev. 2 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PROD
UC
T
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
Ω
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50 -25 0 25 50 75 100 125 150
V = .5V
I = 9A
GS
D
2
V = V
I = 9.7A
GS
D
4.5
V = V
I = 4.5A
GS
D
1.5
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h)
0
0.2
0.4
0.6
0.8
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1 1.2
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
100
1000
10000
0 2 4 6 8 10 12
f = 1MHz
C
iss
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
V = 4V
I = A
DS
D
10
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.01
0.1
1
10
100
0.01 0.1 1
R
Limited
DS(on)
10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board