Diodes DMN1019USN - Manual (Page 2)

DMN1019USN
Document number: DS36999 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN1019USN
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
12 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.3
7.4
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11
8.8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
70 A
Maximum Body Diode Forward Current (Note 6) I
S
2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.68
W
T
A
= +70°C 0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
160 °C/W
t<10s 115 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.83
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
96 °C/W
t<10s 68 °C/W
Thermal Resistance, Junction to Case (Note 6) R
θJC
18 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
12 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
=12V, V
GS
= 0V
Gate-Body Leakage I
GSS
— — ±2 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.35 0.53 0.8 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
— 7 10
mΩ
V
GS
= 4.5V, I
D
= 9.7A
— 8 12 V
GS
= 2.5V, I
D
= 9A
— 10 14 V
GS
= 1.8V, I
D
= 8.1A
— 14 18 V
GS
= 1.5V, I
D
= 4.5A
— 28 41 V
GS
= 1.2V, I
D
= 2.4A
Forward Transfer Admittance IY
fs
I — 28 — S V
DS
= 4V, I
D
= 9.7A
Diode Forward Voltage V
SD
— 0.8 1.2 V V
GS
= 0V, I
S
= 10A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 2426 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 396 — pF
Reverse Transfer Capacitance C
rss
— 375 — pF
Gate Resistance R
g
— 1.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 8V) Q
g
— 50.6 —
nC V
DS
= 4V, I
D
= 10A
Total Gate Charge (V
GS
= 4.5V) Q
g
— 27.3 —
Gate-Source Charge Q
gs
— 3.4 —
Gate-Drain Charge Q
gd
— 5.2 —
Turn-On Delay Time t
D(ON)
— 7.6 — ns
V
DD
= 4V, V
GEN
= 5V, I
D
= 10A,
R
G
= 1Ω, R
L
= 0.4Ω
Turn-Off Delay Time t
D(OFF)
— 22.2 — ns
Turn-On Rise Time t
r
— 57.6 — ns
Turn-Off Fall Time t
f
— 16.8 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P
D
is based on t<10s R
θJA
.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P
D
is based on t<10s R
θJA
.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.